NP90N04VUG-E1-AY
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- Mfr.Part #
- NP90N04VUG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 90A TO252
- Stock
- 1,735
- In Stock ：
- 1,735
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 40V
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.2W
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Published :
- 2008
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Turn-Off Delay Time :
- 65 ns
- Rise Time :
- 20ns
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pulsed Drain Current-Max (IDM) :
- 300A
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Power Dissipation-Max :
- 1.2W Ta 105W Tc
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.004ohm
- Continuous Drain Current (ID) :
- 90A
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 45A, 10V
- Turn On Delay Time :
- 32 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Factory Lead Time :
- 26 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Operating Temperature :
- 175°C TJ
- Fall Time (Typ) :
- 11 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- DS Breakdown Voltage-Min :
- 40V
- Gate Charge (Qg) (Max) @ Vgs :
- 135nC @ 10V
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Datasheets
- NP90N04VUG-E1-AY
N-Channel Tape & Reel (TR) 4m Ω @ 45A, 10V ±20V 7500pF @ 25V 135nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
NP90N04VUG-E1-AY Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 65 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 32 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 40V, it should remain above the 40V level.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
NP90N04VUG-E1-AY Features
a continuous drain current (ID) of 90A
the turn-off delay time is 65 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)
NP90N04VUG-E1-AY Applications
There are a lot of Renesas Electronics America
NP90N04VUG-E1-AY applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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