NP88N075EUE-E2-AY

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

-

FET Feature :

-

Number of Elements :

1

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

Package :

Bulk

Drive Voltage (Max Rds On, Min Rds On) :

10V

Manufacturer :

NEC Electronics Group

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

75 V

Drain to Source Voltage (Vdss) :

75 V

Case Connection :

DRAIN

JESD-609 Code :

e3

Terminal Form :

Gull wing

Supplier Device Package :

TO-263-3

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

450 mJ

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

1.8W (Ta), 288W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

230 nC @ 10 V

Reach Compliance Code :

Compliant

Product Status :

Obsolete

Input Capacitance (Ciss) (Max) @ Vds :

12300 pF @ 25 V

Vgs(th) (Max) @ Id :

4V @ 250µA

HTS Code :

8541.29.00.95

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

352 A

Operating Temperature :

175°C

Rds On (Max) @ Id, Vgs :

8.5mOhm @ 44A, 10V

Drain-source On Resistance-Max :

0.0085 Ω

Terminal Position :

Single

Number of Terminals :

2

ECCN Code :

EAR99

JEDEC-95 Code :

TO-263AB

Current - Continuous Drain (Id) @ 25°C :

88A (Tc)

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Pin Count :

4

Mounting Type :

Surface Mount