NP60N04ILF-E1-AZ

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

Power Dissipation (Max) :

1.2W (Ta), 100W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

75 nC @ 10 V

Drain Current-Max (Abs) (ID) :

60 A

Rds On (Max) @ Id, Vgs :

6.5mOhm @ 30A, 10V

FET Type :

N-Channel

Supplier Device Package :

TO-252 (MP-3Z)

Current - Continuous Drain (Id) @ 25°C :

60A (Tc)

Operating Temperature :

175°C

Surface Mount :

yes

Series :

-

Product Status :

Obsolete

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3900 pF @ 25 V

Configuration :

Single

Polarity/Channel Type :

N-Channel

Manufacturer :

Renesas Electronics Corporation

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Subcategory :

FET General Purpose Power

FET Feature :

-

Power Dissipation-Max (Abs) :

100 W

Package :

Bulk

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Drain to Source Voltage (Vdss) :

40 V