NP60N03SUG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 30A, 10V

Fall Time (Typ) :

13 ns

Published :

2008

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

240A

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Operating Temperature :

175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Rise Time :

20ns

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-252AA

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Pin Count :

3

Terminal Form :

Gull wing

Number of Pins :

3

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.2W Ta 105W Tc

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Turn On Delay Time :

32 ns

Turn-Off Delay Time :

64 ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

7500pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)