NP60N03SUG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Radiation Hardening :

No

ECCN Code :

EAR99

Published :

2008

Power Dissipation-Max :

1.2W Ta 105W Tc

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

240A

Terminal Form :

Gull wing

Number of Terminations :

2

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-252AA

Fall Time (Typ) :

13 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

7500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Rise Time :

20ns

Case Connection :

DRAIN

Turn On Delay Time :

32 ns

Transistor Element Material :

SILICON

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 30A, 10V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

64 ns

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

60A

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Pin Count :

3

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

60A Tc