NP50P06KDG-E1-AY
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- Mfr.Part #
- NP50P06KDG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 50A TO263
- Stock
- 1,708
- In Stock ：
- 1,708
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- 175°C TJ
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 405 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rise Time :
- 45ns
- Drain-source On Resistance-Max :
- 0.023Ohm
- Number of Terminations :
- 2
- Drain to Source Voltage (Vdss) :
- 60V
- FET Type :
- P-Channel
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 25A, 10V
- Mount :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 5000pF @ 10V
- Fall Time (Typ) :
- 270 ns
- Continuous Drain Current (ID) :
- 50A
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 1.8W
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Factory Lead Time :
- 16 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Turn On Delay Time :
- 20 ns
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Published :
- 2007
- DS Breakdown Voltage-Min :
- 60V
- Power Dissipation-Max :
- 1.8W Ta 90W Tc
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- NP50P06KDG-E1-AY
P-Channel Tape & Reel (TR) 17m Ω @ 25A, 10V ±20V 5000pF @ 10V 95nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP50P06KDG-E1-AY Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5000pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 405 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NP50P06KDG-E1-AY Features
a continuous drain current (ID) of 50A
the turn-off delay time is 405 ns
a 60V drain to source voltage (Vdss)
NP50P06KDG-E1-AY Applications
There are a lot of Renesas Electronics America
NP50P06KDG-E1-AY applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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