NP50P04SDG-E1-AY
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- Mfr.Part #
- NP50P04SDG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 50A TO252
- Stock
- 2,309
- In Stock ：
- 2,309
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Power Dissipation :
- 1.2W
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 40V
- Lead Free :
- Lead Free
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 50A
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 9.6m Ω @ 25A, 10V
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 175°C TJ
- Published :
- 2008
- Number of Terminations :
- 2
- Turn-Off Delay Time :
- 405 ns
- Radiation Hardening :
- No
- Terminal Finish :
- MATTE TIN
- Turn On Delay Time :
- 13 ns
- Power Dissipation-Max :
- 1.2W Ta 84W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- P-Channel
- JESD-30 Code :
- R-PSSO-G2
- Fall Time (Typ) :
- 180 ns
- Drain to Source Voltage (Vdss) :
- 40V
- Terminal Position :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rise Time :
- 13ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 5000pF @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Datasheets
- NP50P04SDG-E1-AY
P-Channel Tape & Reel (TR) 9.6m Ω @ 25A, 10V ±20V 5000pF @ 10V 100nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
NP50P04SDG-E1-AY Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5000pF @ 10V.This device conducts a continuous drain current (ID) of 50A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 405 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 40V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
NP50P04SDG-E1-AY Features
a continuous drain current (ID) of 50A
the turn-off delay time is 405 ns
a 40V drain to source voltage (Vdss)
NP50P04SDG-E1-AY Applications
There are a lot of Renesas Electronics America
NP50P04SDG-E1-AY applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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