NP50P04KDG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Published :

2007

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

20 ns

Turn-Off Delay Time :

405 ns

Rds On (Max) @ Id, Vgs :

10m Ω @ 25A, 10V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Transistor Element Material :

SILICON

Rise Time :

45ns

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

1.8W

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

P-Channel

Pin Count :

3

Continuous Drain Current (ID) :

50A

Terminal Position :

Single

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 10V

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

40V

Power Dissipation-Max :

1.8W Ta 90W Tc

Fall Time (Typ) :

230 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)