NP180N055TUJ-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Case Connection :

DRAIN

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab)

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G6

Turn-Off Delay Time :

100 ns

Continuous Drain Current (ID) :

180A

Mount :

Surface Mount

Published :

2010

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 90A, 10V

Rise Time :

20ns

Drain to Source Voltage (Vdss) :

55V

Turn On Delay Time :

45 ns

Mounting Type :

Surface Mount

Number of Pins :

7

Input Capacitance (Ciss) (Max) @ Vds :

14250pF @ 25V

Operating Temperature :

175°C TJ

Fall Time (Typ) :

10 ns

Drain-source On Resistance-Max :

0.0023Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

1.8W Ta 348W Tc

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

Pin Count :

7

Radiation Hardening :

No

DS Breakdown Voltage-Min :

55V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

FET Type :

N-Channel

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING