NP180N055TUJ-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G6

Number of Elements :

1

Terminal Form :

Gull wing

Factory Lead Time :

16 Weeks

Rise Time :

20ns

Number of Terminations :

6

Pin Count :

7

Input Capacitance (Ciss) (Max) @ Vds :

14250pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Drain to Source Voltage (Vdss) :

55V

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab)

Transistor Application :

SWITCHING

Turn-Off Delay Time :

100 ns

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

55V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Published :

2010

Continuous Drain Current (ID) :

180A

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 90A, 10V

Number of Pins :

7

Operating Temperature :

175°C TJ

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0023Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

10 ns

Power Dissipation-Max :

1.8W Ta 348W Tc

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Turn On Delay Time :

45 ns