NP180N04TUG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.8W Ta 288W Tc

Published :

2007

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PSSO-G6

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 90A, 10V

Turn On Delay Time :

54 ns

DS Breakdown Voltage-Min :

40V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

180A

FET Type :

N-Channel

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

720A

Number of Terminations :

6

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

104 ns

Mount :

Surface Mount

Case Connection :

DRAIN

Vgs (Max) :

±20V

Fall Time (Typ) :

21 ns

Rise Time :

43ns

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

175°C TJ

Radiation Hardening :

No

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

25700pF @ 25V

Power Dissipation :

1.8W

Pin Count :

7

Gate Charge (Qg) (Max) @ Vgs :

390nC @ 10V

Mounting Type :

Surface Mount

Terminal Position :

Single

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99