NP180N04TUG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

21 ns

Number of Elements :

1

Terminal Position :

Single

Power Dissipation-Max :

1.8W Ta 288W Tc

DS Breakdown Voltage-Min :

40V

Power Dissipation :

1.8W

Mount :

Surface Mount

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Turn-Off Delay Time :

104 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

180A

Operating Temperature :

175°C TJ

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab)

Rise Time :

43ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

40V

Pin Count :

7

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 90A, 10V

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

25700pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

720A

Gate Charge (Qg) (Max) @ Vgs :

390nC @ 10V

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Case Connection :

DRAIN

Published :

2007

Turn On Delay Time :

54 ns

JESD-30 Code :

R-PSSO-G6

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Radiation Hardening :

No