NP180N04TUG-E1-AY
- Mfr.Part #
- NP180N04TUG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab)
- Datasheet
- Download
- Description
- 180A, 40V, N-CHANNEL MOSFET
- Stock
- 28,126
- In Stock :
- 28,126
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 1.5m Ω @ 90A, 10V
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 25700pF @ 25V
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 21 ns
- Turn-Off Delay Time :
- 104 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 1.8W Ta 288W Tc
- Operating Temperature :
- 175°C TJ
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 7
- Rise Time :
- 43ns
- Turn On Delay Time :
- 54 ns
- DS Breakdown Voltage-Min :
- 40V
- Drain to Source Voltage (Vdss) :
- 40V
- Terminal Finish :
- MATTE TIN
- Terminal Position :
- Single
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSSO-G6
- Number of Terminations :
- 6
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 720A
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab)
- Power Dissipation :
- 1.8W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 180A
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 390nC @ 10V
- Published :
- 2007
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- NP180N04TUG-E1-AY

N-Channel Tape & Reel (TR) 1.5m Ω @ 90A, 10V ±20V 25700pF @ 25V 390nC @ 10V 40V TO-263-7, D2Pak (6 Leads + Tab)
NP180N04TUG-E1-AY Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 25700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 180A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 104 ns.Peak drain current is 720A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 54 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 40V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
NP180N04TUG-E1-AY Features
a continuous drain current (ID) of 180A
the turn-off delay time is 104 ns
based on its rated peak drain current 720A.
a 40V drain to source voltage (Vdss)
NP180N04TUG-E1-AY Applications
There are a lot of Renesas Electronics America
NP180N04TUG-E1-AY applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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