NJW0302G
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- Mfr.Part #
- NJW0302G
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS PNP 250V 15A TO3P-3L
- Stock
- 4,410
- In Stock ：
- 4,410
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 250V
- Pbfree Code :
- yes
- Length :
- 15.8mm
- Max Collector Current :
- 15A
- Collector Base Voltage (VCBO) :
- 250V
- Weight :
- 4.535924g
- Number of Terminations :
- 3
- Width :
- 5mm
- Lead Free :
- Lead Free
- Transition Frequency :
- 30MHz
- Packaging :
- Tube
- Gain Bandwidth Product :
- 30MHz
- Power Dissipation :
- 150W
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-3P-3, SC-65-3
- Published :
- 2007
- Max Power Dissipation :
- 150W
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 3A 5V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- hFE Min :
- 75
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Transistor Application :
- AMPLIFIER
- Frequency :
- 30MHz
- Collector Emitter Saturation Voltage :
- 1V
- Number of Elements :
- 1
- Surface Mount :
- No
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- Height :
- 20.1mm
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 250V
- Factory Lead Time :
- 26 Weeks
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pin Count :
- 3
- Datasheets
- NJW0302G
PNP -65°C~150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-3P-3, SC-65-3 Tube Through Hole
NJW0302G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 3A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 500mA, 5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 30MHz is present in the part.Collector current can be as low as 15A volts at its maximum.
NJW0302G Features
the DC current gain for this device is 75 @ 3A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
NJW0302G Applications
There are a lot of ON Semiconductor
NJW0302G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJW0281G | onsemi | 1,080 | TRANS NPN 250V 15A TO3P-3L |
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