NJW0281G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Radiation Hardening :

No

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

5V

Surface Mount :

No

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

250V

Collector Emitter Voltage (VCEO) :

250V

Current - Collector Cutoff (Max) :

10μA ICBO

Length :

15.8mm

Lead Free :

Lead Free

Packaging :

Tube

Max Collector Current :

15A

Package / Case :

TO-3P-3, SC-65-3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gain Bandwidth Product :

30MHz

Transistor Type :

NPN

Published :

2007

Height :

20.1mm

Frequency :

30MHz

Power Dissipation :

150W

Number of Pins :

3

REACH SVHC :

No SVHC

Width :

5mm

JESD-609 Code :

e3

Transition Frequency :

30MHz

Operating Temperature :

-65°C~150°C TJ

Collector Base Voltage (VCBO) :

250V

Mounting Type :

Through Hole

Pin Count :

3

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

1V

hFE Min :

75

Element Configuration :

Single

Weight :

4.535924g

Max Power Dissipation :

150W

Factory Lead Time :

28 Weeks

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

1V @ 500mA, 5A

DC Current Gain (hFE) (Min) @ Ic, Vce :

75 @ 3A 5V