NJW0281G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

150W

Transistor Element Material :

SILICON

hFE Min :

75

Package / Case :

TO-3P-3, SC-65-3

Collector Base Voltage (VCBO) :

250V

Pbfree Code :

yes

Packaging :

Tube

Number of Elements :

1

Current - Collector Cutoff (Max) :

10μA ICBO

Width :

5mm

Polarity/Channel Type :

NPN

Transition Frequency :

30MHz

Max Power Dissipation :

150W

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

250V

Transistor Type :

NPN

Length :

15.8mm

Pin Count :

3

Height :

20.1mm

Gain Bandwidth Product :

30MHz

Max Collector Current :

15A

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

1V @ 500mA, 5A

Collector Emitter Saturation Voltage :

1V

DC Current Gain (hFE) (Min) @ Ic, Vce :

75 @ 3A 5V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Pins :

3

Surface Mount :

No

Operating Temperature :

-65°C~150°C TJ

Weight :

4.535924g

Published :

2007

Radiation Hardening :

No

Frequency :

30MHz

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

28 Weeks

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

250V

ECCN Code :

EAR99

Lead Free :

Lead Free

Element Configuration :

Single