NJV4031NT1G

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Mfr.Part #
NJV4031NT1G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 40V 3A SOT223
Stock
2,000
In Stock :
2,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Finish :
Tin (Sn)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 300mA, 3A
Max Collector Current :
3A
Factory Lead Time :
9 Weeks
Collector Emitter Breakdown Voltage :
40V
Current - Collector Cutoff (Max) :
100nA ICBO
Continuous Collector Current :
3A
Surface Mount :
yes
Emitter Base Voltage (VEBO) :
6V
Pin Count :
4
Polarity/Channel Type :
NPN
Number of Pins :
4
Lead Free :
Lead Free
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 1A 1V
Max Power Dissipation :
2W
Terminal Position :
Dual
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Package / Case :
TO-261-4, TO-261AA
Element Configuration :
Single
Number of Elements :
1
Radiation Hardening :
No
Gain Bandwidth Product :
215MHz
Collector Emitter Voltage (VCEO) :
40V
JESD-609 Code :
e3
Number of Terminations :
4
Frequency :
215MHz
Packaging :
Tape and Reel (TR)
hFE Min :
100
Case Connection :
COLLECTOR
ECCN Code :
EAR99
Collector Base Voltage (VCBO) :
40V
Mounting Type :
Surface Mount
Transition Frequency :
215MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
2W
Collector Emitter Saturation Voltage :
300mV
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Published :
2012
Terminal Form :
Gull wing
Datasheets
NJV4031NT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi NJV4031NT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Package / Case:TO-261-4, TO-261AA, Number of Terminations:4, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, NJV4031NT1G pinout, NJV4031NT1G datasheet PDF, NJV4031NT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJV4031NT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJV4031NT1G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

NJV4031NT1G Overview


DC current gain in this device equals 200 @ 1A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 300mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 3A to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 215MHz.In extreme cases, the collector current can be as low as 3A volts.

NJV4031NT1G Features


the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 215MHz


NJV4031NT1G Applications


There are a lot of ON Semiconductor
NJV4031NT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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