NJV4030PT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

2W

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

500mV @ 300mA, 3A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Factory Lead Time :

9 Weeks

Power Dissipation :

2W

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Number of Elements :

1

Polarity/Channel Type :

PNP

Max Collector Current :

3A

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Weight :

188.014037mg

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 1V

Published :

2000

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

40V

Emitter Base Voltage (VEBO) :

6V

Terminal Form :

Gull wing

Pbfree Code :

yes

Transistor Element Material :

SILICON

Package / Case :

TO-261-4, TO-261AA

Number of Pins :

4

Max Breakdown Voltage :

40V

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

40V

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

500mV

Collector Emitter Breakdown Voltage :

40V

Terminal Finish :

Tin (Sn)

Pin Count :

4

Gain Bandwidth Product :

160MHz

Frequency :

160MHz

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

PNP

Transition Frequency :

160MHz