NJV4030PT1G
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- Mfr.Part #
- NJV4030PT1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A SOT223
- Stock
- 1,530
- In Stock ：
- 1,530
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2000
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 160MHz
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Frequency :
- 160MHz
- Max Power Dissipation :
- 2W
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Number of Pins :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 300mA, 3A
- Collector Emitter Voltage (VCEO) :
- 40V
- Package / Case :
- TO-261-4, TO-261AA
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation :
- 2W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Case Connection :
- COLLECTOR
- Pin Count :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 1V
- Collector Emitter Saturation Voltage :
- 500mV
- Radiation Hardening :
- No
- Number of Terminations :
- 4
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 40V
- Factory Lead Time :
- 9 Weeks
- Collector Base Voltage (VCBO) :
- 40V
- Transition Frequency :
- 160MHz
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 40V
- Max Collector Current :
- 3A
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 188.014037mg
- Datasheets
- NJV4030PT1G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NJV4030PT1G Overview
In this device, the DC current gain is 200 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 300mA, 3A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
NJV4030PT1G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz
NJV4030PT1G Applications
There are a lot of ON Semiconductor
NJV4030PT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJV4030PT3G | onsemi | 3,754 | TRANS PNP 40V 3A SOT223 |
| NJV4031NT1G | onsemi | 2,000 | TRANS NPN 40V 3A SOT223 |
| NJV4031NT3G | onsemi | 2,570 | TRANS NPN 40V 3A SOT223 |
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