NJV4030PT1G
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- Mfr.Part #
- NJV4030PT1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A SOT223
- Stock
- 1,530
- In Stock ：
- 1,530
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Breakdown Voltage :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Pin Count :
- 4
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Frequency :
- 160MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Max Power Dissipation :
- 2W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-261-4, TO-261AA
- Element Configuration :
- Single
- Published :
- 2000
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Collector Current :
- 3A
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 40V
- Transition Frequency :
- 160MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 300mA, 3A
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 160MHz
- Number of Terminations :
- 4
- Collector Emitter Saturation Voltage :
- 500mV
- Power Dissipation :
- 2W
- ECCN Code :
- EAR99
- Factory Lead Time :
- 9 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 1V
- Weight :
- 188.014037mg
- Terminal Finish :
- Tin (Sn)
- Datasheets
- NJV4030PT1G
NJV4030PT1G Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NJV4030PT1G Overview
In this device, the DC current gain is 200 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 300mA, 3A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
NJV4030PT1G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz
NJV4030PT1G Applications
There are a lot of ON Semiconductor
NJV4030PT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJV4030PT3G | onsemi | 3,754 | TRANS PNP 40V 3A SOT223 |
| NJV4031NT1G | onsemi | 2,000 | TRANS NPN 40V 3A SOT223 |
| NJV4031NT3G | onsemi | 2,570 | TRANS NPN 40V 3A SOT223 |
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