NJV4030PT1G
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- Mfr.Part #
- NJV4030PT1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A SOT223
- Stock
- 1,530
- In Stock ：
- 1,530
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 40V
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 40V
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 160MHz
- Max Collector Current :
- 3A
- Transition Frequency :
- 160MHz
- Mounting Type :
- Surface Mount
- Weight :
- 188.014037mg
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 2W
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 40V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Factory Lead Time :
- 9 Weeks
- Max Power Dissipation :
- 2W
- Published :
- 2000
- Pin Count :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 300mA, 3A
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-261-4, TO-261AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 1V
- Mount :
- Surface Mount
- Number of Pins :
- 4
- Number of Terminations :
- 4
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 40V
- Collector Emitter Saturation Voltage :
- 500mV
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 160MHz
- Terminal Finish :
- Tin (Sn)
- Datasheets
- NJV4030PT1G
NJV4030PT1G Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NJV4030PT1G Overview
In this device, the DC current gain is 200 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 300mA, 3A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
NJV4030PT1G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz
NJV4030PT1G Applications
There are a lot of ON Semiconductor
NJV4030PT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJV4030PT3G | onsemi | 3,754 | TRANS PNP 40V 3A SOT223 |
| NJV4031NT1G | onsemi | 2,000 | TRANS NPN 40V 3A SOT223 |
| NJV4031NT3G | onsemi | 2,570 | TRANS NPN 40V 3A SOT223 |
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