NJL3281DG
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- Mfr.Part #
- NJL3281DG
- Manufacturer
- onsemi
- Package / Case
- TO-264-5
- Datasheet
- Download
- Description
- TRANS NPN 260V 15A TO264
- Stock
- 220
- In Stock ：
- 220
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 260V
- Max Collector Current :
- 15A
- hFE Min :
- 75
- Packaging :
- Tube
- Power Dissipation :
- 200W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 5A 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 5
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 260V
- Factory Lead Time :
- 5 Weeks
- REACH SVHC :
- No SVHC
- Pin Count :
- 5
- Voltage - Rated DC :
- 260V
- Max Power Dissipation :
- 200W
- Collector Base Voltage (VCBO) :
- 260V
- Transition Frequency :
- 30MHz
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1A, 10A
- Collector Emitter Voltage (VCEO) :
- 260V
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 15A
- Published :
- 2005
- Height :
- 25.98mm
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Polarity/Channel Type :
- NPN
- Length :
- 19.89mm
- Collector Emitter Saturation Voltage :
- 3V
- Gain Bandwidth Product :
- 30MHz
- Number of Terminations :
- 5
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-264-5
- Lead Free :
- Lead Free
- Additional Feature :
- High Reliability
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 30MHz
- Surface Mount :
- No
- Width :
- 4.89mm
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- NJL3281DG
NPN -65°C~150°C TJ 50μA ICBO 1 Elements 5 Terminations SILICON NPN TO-264-5 Tube Through Hole
NJL3281DG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 1A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 15A.A transition frequency of 30MHz is present in the part.There is a breakdown input voltage of 260V volts that it can take.Collector current can be as low as 15A volts at its maximum.
NJL3281DG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 30MHz
NJL3281DG Applications
There are a lot of ON Semiconductor
NJL3281DG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJL3281D | onsemi | 247 | TRANS NPN 260V 15A TO264 |
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