NJL3281DG
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- Mfr.Part #
- NJL3281DG
- Manufacturer
- onsemi
- Package / Case
- TO-264-5
- Datasheet
- Download
- Description
- TRANS NPN 260V 15A TO264
- Stock
- 220
- In Stock ：
- 220
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 200W
- Transistor Type :
- NPN
- Factory Lead Time :
- 5 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 3V
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tube
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 5
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 260V
- Published :
- 2005
- Number of Terminations :
- 5
- Length :
- 19.89mm
- Collector Emitter Voltage (VCEO) :
- 260V
- REACH SVHC :
- No SVHC
- Additional Feature :
- High Reliability
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1A, 10A
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Current Rating :
- 15A
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- TO-264-5
- Number of Elements :
- 1
- Voltage - Rated DC :
- 260V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 5A 5V
- Collector Base Voltage (VCBO) :
- 260V
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 260V
- Max Power Dissipation :
- 200W
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 75
- Max Collector Current :
- 15A
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Height :
- 25.98mm
- Width :
- 4.89mm
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Transition Frequency :
- 30MHz
- Frequency :
- 30MHz
- Pin Count :
- 5
- Gain Bandwidth Product :
- 30MHz
- Pbfree Code :
- yes
- Datasheets
- NJL3281DG
NPN -65°C~150°C TJ 50μA ICBO 1 Elements 5 Terminations SILICON NPN TO-264-5 Tube Through Hole
NJL3281DG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 1A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 15A.A transition frequency of 30MHz is present in the part.There is a breakdown input voltage of 260V volts that it can take.Collector current can be as low as 15A volts at its maximum.
NJL3281DG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 30MHz
NJL3281DG Applications
There are a lot of ON Semiconductor
NJL3281DG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJL3281D | onsemi | 247 | TRANS NPN 260V 15A TO264 |
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