NJL3281D
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- Mfr.Part #
- NJL3281D
- Manufacturer
- onsemi
- Package / Case
- TO-264-5
- Datasheet
- Download
- Description
- TRANS NPN 260V 15A TO264
- Stock
- 247
- In Stock ：
- 247
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Polarity/Channel Type :
- NPN
- hFE Min :
- 75
- Factory Lead Time :
- 5 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2005
- Pin Count :
- 5
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Width :
- 4.89mm
- Gain Bandwidth Product :
- 30MHz
- Collector Emitter Breakdown Voltage :
- 260V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 25.98mm
- Max Power Dissipation :
- 200W
- Collector Emitter Saturation Voltage :
- 3V
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 260V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Frequency :
- 30MHz
- Length :
- 19.89mm
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1A, 10A
- Number of Pins :
- 5
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Terminal Finish :
- Tin (Sn)
- Additional Feature :
- High Reliability
- Power Dissipation :
- 200W
- Max Collector Current :
- 15A
- Max Breakdown Voltage :
- 260V
- Element Configuration :
- Single
- Current Rating :
- 15A
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 5
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 260V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 5A 5V
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 260V
- Transition Frequency :
- 30MHz
- Surface Mount :
- No
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Package / Case :
- TO-264-5
- Datasheets
- NJL3281D
NPN -65°C~150°C TJ 50μA ICBO 1 Elements 5 Terminations SILICON NPN TO-264-5 Tube Through Hole
NJL3281DG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 1A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 15A.A transition frequency of 30MHz is present in the part.There is a breakdown input voltage of 260V volts that it can take.Collector current can be as low as 15A volts at its maximum.
NJL3281DG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 30MHz
NJL3281DG Applications
There are a lot of ON Semiconductor
NJL3281DG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJL3281DG | onsemi | 220 | TRANS NPN 260V 15A TO264 |
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