NJL3281D
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- Mfr.Part #
- NJL3281D
- Manufacturer
- onsemi
- Package / Case
- TO-264-5
- Datasheet
- Download
- Description
- TRANS NPN 260V 15A TO264
- Stock
- 247
- In Stock ：
- 247
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 3V
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 30MHz
- Max Breakdown Voltage :
- 260V
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Radiation Hardening :
- No
- Max Collector Current :
- 15A
- Width :
- 4.89mm
- Operating Temperature :
- -65°C~150°C TJ
- Power Dissipation :
- 200W
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- No
- Max Power Dissipation :
- 200W
- Current Rating :
- 15A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 5A 5V
- Collector Emitter Breakdown Voltage :
- 260V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1A, 10A
- Additional Feature :
- High Reliability
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 5 Weeks
- Package / Case :
- TO-264-5
- Collector Emitter Voltage (VCEO) :
- 260V
- Transition Frequency :
- 30MHz
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 5
- Collector Base Voltage (VCBO) :
- 260V
- Voltage - Rated DC :
- 260V
- Pin Count :
- 5
- Number of Pins :
- 5
- Height :
- 25.98mm
- Published :
- 2005
- Length :
- 19.89mm
- ECCN Code :
- EAR99
- hFE Min :
- 75
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 30MHz
- Datasheets
- NJL3281D
NPN -65°C~150°C TJ 50μA ICBO 1 Elements 5 Terminations SILICON NPN TO-264-5 Tube Through Hole
NJL3281DG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 1A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 15A.A transition frequency of 30MHz is present in the part.There is a breakdown input voltage of 260V volts that it can take.Collector current can be as low as 15A volts at its maximum.
NJL3281DG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 30MHz
NJL3281DG Applications
There are a lot of ON Semiconductor
NJL3281DG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJL3281DG | onsemi | 220 | TRANS NPN 260V 15A TO264 |
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