NJL3281D
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- Mfr.Part #
- NJL3281D
- Manufacturer
- onsemi
- Package / Case
- TO-264-5
- Datasheet
- Download
- Description
- TRANS NPN 260V 15A TO264
- Stock
- 247
- In Stock ：
- 247
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 4.89mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 5A 5V
- Transistor Type :
- NPN
- Surface Mount :
- No
- Pin Count :
- 5
- Collector Emitter Saturation Voltage :
- 3V
- Current Rating :
- 15A
- Package / Case :
- TO-264-5
- Number of Terminations :
- 5
- Lead Free :
- Lead Free
- Height :
- 25.98mm
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Radiation Hardening :
- No
- Additional Feature :
- High Reliability
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 30MHz
- Transition Frequency :
- 30MHz
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 5 Weeks
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Max Power Dissipation :
- 200W
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 260V
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Frequency :
- 30MHz
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1A, 10A
- Collector Base Voltage (VCBO) :
- 260V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Max Breakdown Voltage :
- 260V
- Element Configuration :
- Single
- Power Dissipation :
- 200W
- Max Collector Current :
- 15A
- Length :
- 19.89mm
- Collector Emitter Breakdown Voltage :
- 260V
- Published :
- 2005
- hFE Min :
- 75
- Number of Pins :
- 5
- Operating Temperature :
- -65°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 260V
- Datasheets
- NJL3281D
NPN -65°C~150°C TJ 50μA ICBO 1 Elements 5 Terminations SILICON NPN TO-264-5 Tube Through Hole
NJL3281DG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 1A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 15A.A transition frequency of 30MHz is present in the part.There is a breakdown input voltage of 260V volts that it can take.Collector current can be as low as 15A volts at its maximum.
NJL3281DG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 30MHz
NJL3281DG Applications
There are a lot of ON Semiconductor
NJL3281DG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJL3281DG | onsemi | 220 | TRANS NPN 260V 15A TO264 |
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