NJL3281D
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- Mfr.Part #
- NJL3281D
- Manufacturer
- onsemi
- Package / Case
- TO-264-5
- Datasheet
- Download
- Description
- TRANS NPN 260V 15A TO264
- Stock
- 247
- In Stock ：
- 247
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 5
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 200W
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Collector Emitter Voltage (VCEO) :
- 260V
- Gain Bandwidth Product :
- 30MHz
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1A, 10A
- Radiation Hardening :
- No
- Frequency :
- 30MHz
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 200W
- Factory Lead Time :
- 5 Weeks
- Transition Frequency :
- 30MHz
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 3V
- Width :
- 4.89mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 5A 5V
- Collector Emitter Breakdown Voltage :
- 260V
- Package / Case :
- TO-264-5
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 19.89mm
- Voltage - Rated DC :
- 260V
- Polarity/Channel Type :
- NPN
- Current Rating :
- 15A
- Mounting Type :
- Through Hole
- hFE Min :
- 75
- Operating Temperature :
- -65°C~150°C TJ
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Additional Feature :
- High Reliability
- RoHS Status :
- ROHS3 Compliant
- Height :
- 25.98mm
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 5
- Max Breakdown Voltage :
- 260V
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Max Collector Current :
- 15A
- Transistor Application :
- AMPLIFIER
- Surface Mount :
- No
- Number of Pins :
- 5
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Published :
- 2005
- Collector Base Voltage (VCBO) :
- 260V
- Datasheets
- NJL3281D
NPN -65°C~150°C TJ 50μA ICBO 1 Elements 5 Terminations SILICON NPN TO-264-5 Tube Through Hole
NJL3281DG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 1A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 15A.A transition frequency of 30MHz is present in the part.There is a breakdown input voltage of 260V volts that it can take.Collector current can be as low as 15A volts at its maximum.
NJL3281DG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 30MHz
NJL3281DG Applications
There are a lot of ON Semiconductor
NJL3281DG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJL3281DG | onsemi | 220 | TRANS NPN 260V 15A TO264 |
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