NJD2873T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

300mV

Case Connection :

COLLECTOR

Transition Frequency :

65MHz

Packaging :

Tape and Reel (TR)

Length :

6.73mm

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Contact Plating :

Tin

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Current Rating :

2A

Mount :

Surface Mount

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

Vce Saturation (Max) @ Ib, Ic :

300mV @ 50mA, 1A

Gain Bandwidth Product :

65MHz

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

50V

Collector Base Voltage (VCBO) :

50V

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Breakdown Voltage :

50V

Width :

6.22mm

Lead Free :

Lead Free

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

100nA ICBO

Power Dissipation :

1.68W

Transistor Type :

NPN

Max Power Dissipation :

1.68W

Collector Emitter Breakdown Voltage :

50V

hFE Min :

120

Time@Peak Reflow Temperature-Max (s) :

40

Height :

2.38mm

Base Part Number :

NJD2873

Max Collector Current :

2A

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Voltage - Rated DC :

50V

Published :

2005

Operating Temperature :

-65°C~175°C TJ

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Pin Count :

3

Number of Elements :

1

Pbfree Code :

yes

Frequency :

65MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 2V

Emitter Base Voltage (VEBO) :

5V