NJD2873RL
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- Mfr.Part #
- NJD2873RL
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A DPAK
- Stock
- 15,600
- In Stock ：
- 15,600
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Voltage - Rated DC :
- 50V
- Collector Emitter Voltage (VCEO) :
- 300mV
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 65MHz
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1.68W
- Collector Base Voltage (VCBO) :
- 50V
- Lead Free :
- Contains Lead
- Collector Emitter Breakdown Voltage :
- 50V
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Polarity/Channel Type :
- NPN
- Published :
- 2006
- Base Part Number :
- NJD2873
- Current Rating :
- 2A
- hFE Min :
- 80
- Element Configuration :
- Single
- Number of Terminations :
- 2
- Max Collector Current :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transition Frequency :
- 65MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 300mV
- Peak Reflow Temperature (Cel) :
- 240
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Transistor Application :
- AMPLIFIER
- Mount :
- Surface Mount
- JESD-609 Code :
- e0
- Operating Temperature :
- -65°C~175°C TJ
- Datasheets
- NJD2873RL
NPN -65°C~175°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NJD2873RL Overview
This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 50mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 65MHz.A maximum collector current of 2A volts is possible.
NJD2873RL Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 65MHz
NJD2873RL Applications
There are a lot of ON Semiconductor
NJD2873RL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| NJD2873 | onsemi | 4,577 | TRANS PWR NPN 2A 50V BIPO DPAK |
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| NJD2873T4G | onsemi | 8,920 | TRANS NPN 50V 2A DPAK |
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