NGTB50N65FL2WG

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Packaging :

Tube

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Package / Case :

TO-247-3

Td (on/off) @ 25°C :

100ns/237ns

Input Type :

Standard

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

650V

Collector Emitter Voltage (VCEO) :

2V

Max Power Dissipation :

417W

Max Collector Current :

100A

Operating Temperature :

-55°C~175°C TJ

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 50A

Mount :

Through Hole

JESD-609 Code :

e3

Lead Free :

Lead Free

Current - Collector Pulsed (Icm) :

200A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Test Condition :

400V, 50A, 10 Ω, 15V

Reverse Recovery Time :

94 ns

Factory Lead Time :

18 Weeks

Published :

2015

Gate Charge :

220nC

ECCN Code :

EAR99

IGBT Type :

Trench Field Stop

Gate-Emitter Thr Voltage-Max :

6.5V

Power - Max :

417W

Switching Energy :

1.5mJ (on), 460μJ (off)

Gate-Emitter Voltage-Max :

20V

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant