NGTB50N65FL2WAG

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Mfr.Part #
NGTB50N65FL2WAG
Manufacturer
onsemi
Package / Case
TO-247-4
Datasheet
Download
Description
IGBT FIELD STOP 650V 160A TO247
Stock
18,708
In Stock :
18,708

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Reverse Recovery Time :
94ns
Current - Collector (Ic) (Max) :
160A
Input Type :
Standard
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Packaging :
Tube
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 50A
IGBT Type :
Field Stop
Package / Case :
TO-247-4
RoHS Status :
ROHS3 Compliant
Test Condition :
400V, 50A, 10 Ω, 15V
Gate Charge :
215nC
Voltage - Collector Emitter Breakdown (Max) :
650V
Switching Energy :
420μJ (on), 550μJ (off)
Pbfree Code :
yes
Power - Max :
417W
Factory Lead Time :
4 Weeks
Operating Temperature :
-55°C~175°C TJ
Mounting Type :
Through Hole
Td (on/off) @ 25°C :
23ns/123ns
Published :
2016
Datasheets
NGTB50N65FL2WAG
Introducing Transistors - IGBTs - Single onsemi NGTB50N65FL2WAG from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-4, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, NGTB50N65FL2WAG pinout, NGTB50N65FL2WAG datasheet PDF, NGTB50N65FL2WAG amp .Beyond Transistors - IGBTs - Single onsemi NGTB50N65FL2WAG ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



NGTB50N65FL2WAG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

NGTB50N65FL2WAG            Description


This Insulated Gate Bipolar Transistor (IGBT) features a robust and   cost effective Field Stop II Trench construction, and provides superior   performance in demanding switching applications, offering both low   on state voltage and minimal switching loss. In addition, this new   device is packaged in a TO?247?4L package that provides significant   reduction in Eon Losses compared to standard TO?247?3L package.   The IGBT is well suited for UPS and solar applications. Incorporated

into the device is a soft and fast co?packaged free wheeling diode with   a low forward voltage.


NGTB50N65FL2WAG            Features


? Extremely Efficient Trench with Field Stop Technology

? TJmax = 175°C

? Improved Gate Control Lowers Switching Losses

? Separate Emitter Drive Pin

? TO?247?4L for Minimal Eon Losses

? Optimized for High Speed Switching

? This is a Pb?Free Device

 

NGTB50N65FL2WAG               Applications


? Solar Inverters

? Uninterruptible Power Supplies (UPS)

? Neutral Point Clamp Topology



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