NGTB50N60FL2WG

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Power - Max :

417W

Gate-Emitter Voltage-Max :

20V

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Reverse Recovery Time :

94 ns

ECCN Code :

EAR99

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 50A

Max Power Dissipation :

417W

Mounting Type :

Through Hole

Input Type :

Standard

RoHS Status :

RoHS Compliant

Collector Emitter Voltage (VCEO) :

2V

Switching Energy :

1.5mJ (on), 460μJ (off)

Gate-Emitter Thr Voltage-Max :

6.5V

Td (on/off) @ 25°C :

100ns/237ns

Current - Collector Pulsed (Icm) :

200A

Pbfree Code :

yes

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

IGBT Type :

Trench Field Stop

Lead Free :

Lead Free

Test Condition :

400V, 50A, 10 Ω, 15V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2014

Collector Emitter Breakdown Voltage :

600V

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Gate Charge :

220nC

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Max Collector Current :

100A

Package / Case :

TO-247-3

Factory Lead Time :

5 Weeks