NGTB50N60FL2WG

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Mfr.Part #
NGTB50N60FL2WG
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 50A TO247
Stock
28,932
In Stock :
28,932

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Number of Pins :
3
ECCN Code :
EAR99
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 4 days ago)
RoHS Status :
RoHS Compliant
Switching Energy :
1.5mJ (on), 460μJ (off)
Terminal Finish :
Tin (Sn)
IGBT Type :
Trench Field Stop
Gate-Emitter Thr Voltage-Max :
6.5V
Max Power Dissipation :
417W
Mount :
Through Hole
Package / Case :
TO-247-3
Collector Emitter Breakdown Voltage :
600V
Td (on/off) @ 25°C :
100ns/237ns
Operating Temperature :
-55°C~175°C TJ
Element Configuration :
Single
Published :
2014
JESD-609 Code :
e3
Gate-Emitter Voltage-Max :
20V
Max Collector Current :
100A
Polarity/Channel Type :
N-Channel
Input Type :
Standard
Pbfree Code :
yes
Mounting Type :
Through Hole
Test Condition :
400V, 50A, 10 Ω, 15V
Power - Max :
417W
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 50A
Reverse Recovery Time :
94 ns
Gate Charge :
220nC
Factory Lead Time :
5 Weeks
Current - Collector Pulsed (Icm) :
200A
Packaging :
Tube
Collector Emitter Voltage (VCEO) :
2V
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
NGTB50N60FL2WG
Introducing Transistors - IGBTs - Single onsemi NGTB50N60FL2WG from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-247-3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, NGTB50N60FL2WG pinout, NGTB50N60FL2WG datasheet PDF, NGTB50N60FL2WG amp .Beyond Transistors - IGBTs - Single onsemi NGTB50N60FL2WG ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NGTB50N60FL2WG


NGTB50N60FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

NGTB50N60FL2WG             Description

 

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co ? packaged free wheeling diode with a low forward voltage.


NGTB50N60FL2WG                Features


? Extremely Efficient Trench with Field Stop Technology

? TJmax = 175 ° C

? Soft Fast Reverse Recovery Diode

? Optimized for High Speed Switching

? 5 s Short ? Circuit Capability

? This is a Pb ? Free Device

NGTB50N60FL2WG                   Applications

? Solar Inverters

? Uninterruptible Power Supplies (UPS)

? Welding

 


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