NGTB50N120FL2WG

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 50A

Pin Count :

3

Td (on/off) @ 25°C :

118ns/282ns

JESD-609 Code :

e3

Factory Lead Time :

7 Weeks

Max Collector Current :

100A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

1.2kV

Height :

21.4mm

Gate Charge :

311nC

Gate-Emitter Voltage-Max :

20V

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Published :

2008

Gate-Emitter Thr Voltage-Max :

6.5V

Mount :

Through Hole

Element Configuration :

Single

Switching Energy :

4.4mJ (on), 1.4mJ (off)

Reverse Recovery Time :

256 ns

Collector Emitter Breakdown Voltage :

1.2kV

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector Pulsed (Icm) :

200A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Power - Max :

535W

Weight :

6.500007g

Input Type :

Standard

Max Power Dissipation :

535W

IGBT Type :

Trench Field Stop

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

2.2V

ECCN Code :

EAR99

Packaging :

Tube

Width :

5.3mm

Length :

16.25mm

Number of Pins :

3

Test Condition :

600V, 50A, 10 Ω, 15V

Package / Case :

TO-247-3

Voltage - Collector Emitter Breakdown (Max) :

1200V