NGTB40N65IHL2WG

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Mfr.Part #
NGTB40N65IHL2WG
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT TRENCH/FS 650V 80A TO247-3
Stock
4,971
In Stock :
4,971

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
IGBT Type :
Trench Field Stop
Test Condition :
400V, 40A, 10 Ω, 15V
Mounting Type :
Through Hole
Vce(on) (Max) @ Vge, Ic :
2.2V @ 15V, 40A
Factory Lead Time :
12 Weeks
Max Power Dissipation :
300W
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
Gate-Emitter Thr Voltage-Max :
6.5V
Current - Collector Pulsed (Icm) :
160A
Element Configuration :
Single
Packaging :
Tube
Collector Emitter Voltage (VCEO) :
2.2V
Max Collector Current :
80A
Pbfree Code :
yes
ECCN Code :
EAR99
Terminal Finish :
Tin (Sn)
Collector Emitter Breakdown Voltage :
650V
JESD-609 Code :
e3
Published :
2014
Gate-Emitter Voltage-Max :
20V
Switching Energy :
360μJ (off)
Operating Temperature :
-55°C~175°C TJ
Power - Max :
300W
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Package / Case :
TO-247-3
Gate Charge :
135nC
Td (on/off) @ 25°C :
-/140ns
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reverse Recovery Time :
465 ns
Input Type :
Standard
Lead Free :
Lead Free
Datasheets
NGTB40N65IHL2WG
Introducing Transistors - IGBTs - Single onsemi NGTB40N65IHL2WG from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, NGTB40N65IHL2WG pinout, NGTB40N65IHL2WG datasheet PDF, NGTB40N65IHL2WG amp .Beyond Transistors - IGBTs - Single onsemi NGTB40N65IHL2WG ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NGTB40N65IHL2WG


NGTB40N65IHL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

NGTB40N65IHL2WG Description


This Insulated Gate Bipolar Transistor (IGBT) NGTB40N65IHL2WG features a robust and cost-effective Field Stop (FS) Trench construction and provides superior performance in demanding switching applications, offering both low-on-state voltage and minimal switching loss. The IGBT NGTB40N65IHL2WG is well-suited for half-bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free-wheeling diode with a low forward voltage.



NGTB40N65IHL2WG Features


Extremely Efficient Trench with Field Stop Technology

Low Switching Loss Reduces System Power Dissipation

Optimized for Low Losses in IH Cooker Application

TJmax= 175°C

Soft, Fast Free Wheeling Diode

This is a Pb- -Free Device



NGTB40N65IHL2WG Applications


Inductive Heating

Soft Switching

Automotive 

Body electronics & lighting 

Communications equipment


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