NGTB40N120FL2WG

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Voltage (VCEO) :

1.2kV

Height :

21.4mm

Terminal Finish :

Tin (Sn)

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 40A

Power - Max :

535W

JESD-609 Code :

e3

Width :

5.3mm

IGBT Type :

Trench Field Stop

Gate-Emitter Voltage-Max :

20V

Current - Collector Pulsed (Icm) :

200A

Td (on/off) @ 25°C :

116ns/286ns

Test Condition :

600V, 40A, 10 Ω, 15V

Max Collector Current :

80A

Weight :

6.500007g

Pin Count :

3

Published :

2012

Operating Temperature :

-55°C~175°C TJ

Collector Emitter Breakdown Voltage :

1.2kV

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Max Power Dissipation :

535W

Pbfree Code :

yes

Length :

16.25mm

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-247-3

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Mount :

Through Hole

Lead Free :

Lead Free

Factory Lead Time :

13 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate-Emitter Thr Voltage-Max :

6.5V

Collector Emitter Saturation Voltage :

2V

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Gate Charge :

313nC

Packaging :

Tube

Voltage - Collector Emitter Breakdown (Max) :

1200V

Reverse Recovery Time :

240 ns

ECCN Code :

EAR99

Input Type :

Standard

Switching Energy :

3.4mJ (on), 1.1mJ (off)