NGTB30N60L2WG
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- Mfr.Part #
- NGTB30N60L2WG
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 30A TO247
- Stock
- 62
- In Stock ：
- 62
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Switching Energy :
- 310μJ (on), 1.14mJ (off)
- Factory Lead Time :
- 11 Weeks
- Polarity/Channel Type :
- N-Channel
- JESD-609 Code :
- e3
- Current - Collector Pulsed (Icm) :
- 60A
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Gate Charge :
- 166nC
- Input Type :
- Standard
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 600V
- Test Condition :
- 300V, 30A, 30 Ω, 15V
- Max Power Dissipation :
- 225W
- Package / Case :
- TO-247-3
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce(on) (Max) @ Vge, Ic :
- 1.6V @ 15V, 30A
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Gate-Emitter Voltage-Max :
- 20V
- Reverse Recovery Time :
- 70 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power - Max :
- 225W
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Operating Temperature :
- 175°C TJ
- Reach Compliance Code :
- not_compliant
- Td (on/off) @ 25°C :
- 100ns/390ns
- Max Collector Current :
- 100A
- Packaging :
- Tube
- Datasheets
- NGTB30N60L2WG
NGTB30N60L2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
NGTB30N60L2WG Description
Worldway Electronics distributes the NGTB30N60L2WG, which is made by On Semiconductor, is an N-Channel IGBT with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V. It belongs to the IGBT Transistors category. It's used in a variety of industries, including automotive hybrid, electric, and powertrain systems, industrial motor drives, enterprise systems, and enterprise machines. IGBT, N-Channel with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V are the major parameters of this part. It's also eco-friendly and RoHS-compliant (lead-free / RoHS-compliant).
NGTB30N60L2WG Features
-
IGBT tf=80ns(typ)
-
Diode trr=70ns(typ)
-
IGBT IC=100A (Tc=25°C)
-
5μs short circuit capability
-
Diode VF=1.7V(typ) [IF=30A]
-
Maximum junction temperature Tj=175°C
-
IGBT VCE(sat)=1.4V(typ) [IC=30A, VGE=15V]
-
Pb-Free, Halogen Free and RoHS Compliance
-
Low switching loss in higher frequency applications
NGTB30N60L2WG Applications
-
General-purpose inverter
-
Power factor correction of white goods appliance
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