NGTB30N60FWG

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Published :

2012

Number of Pins :

3

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Collector Emitter Saturation Voltage :

1.45V

Max Power Dissipation :

167W

Collector Emitter Breakdown Voltage :

600V

Power Dissipation :

167W

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 20 hours ago)

Reverse Recovery Time :

72ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Halogen Free :

Halogen Free

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 30A

Width :

5.3mm

Lead Free :

Lead Free

Surface Mount :

No

Input Type :

Standard

Pbfree Code :

yes

Length :

16.25mm

Test Condition :

400V, 30A, 10 Ω, 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Gate-Emitter Voltage-Max :

20V

Switching Energy :

650μJ (on), 650μJ (off)

Element Configuration :

Single

Package / Case :

TO-247-3

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

60A

Gate-Emitter Thr Voltage-Max :

6.5V

Td (on/off) @ 25°C :

81ns/190ns

Current - Collector Pulsed (Icm) :

120A

Polarity/Channel Type :

N-Channel

Gate Charge :

170nC

Collector Emitter Voltage (VCEO) :

600V

IGBT Type :

Trench

Mounting Type :

Through Hole

Pin Count :

3

REACH SVHC :

No SVHC

Height :

21.4mm

JESD-609 Code :

e3