NGTB30N60FLWG
- Mfr.Part #
- NGTB30N60FLWG
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 60A 250W TO247
- Stock
- 6,436
- In Stock :
- 6,436
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Package / Case :
- TO-247-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 600V
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 15V, 30A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Number of Pins :
- 3
- Published :
- 2012
- Length :
- 16.25mm
- Surface Mount :
- No
- Td (on/off) @ 25°C :
- 83ns/170ns
- Mounting Type :
- Through Hole
- Input Type :
- Standard
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 20 hours ago)
- Max Power Dissipation :
- 250W
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Gate-Emitter Voltage-Max :
- 20V
- REACH SVHC :
- No SVHC
- IGBT Type :
- Trench Field Stop
- Power - Max :
- 250W
- Operating Temperature :
- -55°C~150°C TJ
- Reverse Recovery Time :
- 72 ns
- Terminal Finish :
- Tin (Sn)
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Max Collector Current :
- 60A
- Width :
- 5.3mm
- Switching Energy :
- 700μJ (on), 280μJ (off)
- Height :
- 21.4mm
- Test Condition :
- 400V, 30A, 10 Ω, 15V
- Collector Emitter Breakdown Voltage :
- 600V
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Lead Free :
- Lead Free
- Weight :
- 6.500007g
- Gate Charge :
- 170nC
- Halogen Free :
- Halogen Free
- Collector Emitter Saturation Voltage :
- 1.65V
- Packaging :
- Tube
- Current - Collector Pulsed (Icm) :
- 120A
- Datasheets
- NGTB30N60FLWG

NGTB30N60FLWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
NGTB30N60FLWG Description
Insulated Gate Bipolar Transistor (IGBT) NGTB30N60FLWG offers both low on-state voltage and minimum switching loss and is constructed with a durable and cost-effective trench. It offers exceptional performance in demanding switching applications.
NGTB30N60FLWG Features
-
These are Pb?Free Devices
-
5 ms Short?Circuit Capability
-
Soft Fast Reverse Recovery Diode
-
Optimized for High-Speed Switching
-
Low Switching Loss Reduces System Power Dissipation
-
Low Saturation Voltage using Trench with Field Stop Technology
NGTB30N60FLWG Applications
-
Solar Inverters
-
Uninterruptable Power Supply (UPS)
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