NDC7003P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.7mm

REACH SVHC :

No SVHC

Max Junction Temperature (Tj) :

150°C

Contact Plating :

Tin

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Pins :

6

Number of Elements :

2

Turn-Off Delay Time :

8 ns

Factory Lead Time :

23 Weeks

Terminal Form :

Gull wing

Current Rating :

-220mA

Max Power Dissipation :

960mW

Power - Max :

700mW

Voltage - Rated DC :

-50V

Rise Time :

10ns

Fall Time (Typ) :

10 ns

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

5 Ω @ 340mA, 10V

Turn On Delay Time :

3.2 ns

Mount :

Surface Mount

FET Type :

2 P-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

66pF @ 25V

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Resistance :

5Ohm

Min Breakdown Voltage :

60V

Power Dissipation :

960mW

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

-1V

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Length :

3mm

Current - Continuous Drain (Id) @ 25°C :

340mA

Element Configuration :

Dual

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 10V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

-1.9 V

Published :

2002

Number of Channels :

2

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

-340mA

Drain to Source Breakdown Voltage :

-60V

Height :

1.1mm

Drain Current-Max (Abs) (ID) :

0.34A

Weight :

36mg