NDC7003P
- Mfr.Part #
- NDC7003P
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET 2P-CH 60V 0.34A SSOT6
- Stock
- 29,339
- In Stock :
- 29,339
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Turn-Off Delay Time :
- 8 ns
- Nominal Vgs :
- -1.9 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time :
- 3.2 ns
- Power - Max :
- 700mW
- Current Rating :
- -220mA
- Element Configuration :
- Dual
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Weight :
- 36mg
- Radiation Hardening :
- No
- Number of Elements :
- 2
- Number of Pins :
- 6
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Height :
- 1.1mm
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 P-Channel (Dual)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Current - Continuous Drain (Id) @ 25°C :
- 340mA
- Rise Time :
- 10ns
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -50V
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PowerTrench®
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 10 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Junction Temperature (Tj) :
- 150°C
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- -340mA
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- -1V
- Min Breakdown Voltage :
- 60V
- Power Dissipation :
- 960mW
- Resistance :
- 5Ohm
- Drain Current-Max (Abs) (ID) :
- 0.34A
- Gate Charge (Qg) (Max) @ Vgs :
- 2.2nC @ 10V
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 66pF @ 25V
- Drain to Source Breakdown Voltage :
- -60V
- Lead Free :
- Lead Free
- Number of Terminations :
- 6
- Published :
- 2002
- Max Power Dissipation :
- 960mW
- Width :
- 1.7mm
- Mount :
- Surface Mount
- Length :
- 3mm
- Number of Channels :
- 2
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 340mA, 10V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 23 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Datasheets
- NDC7003P

NDC7003P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NDC7003P Description
These dual P?Channel Enhancement Mode Power Field Effect Transistors are produced using onsemi?ˉs proprietary Trench Technology. This very high density process has been designed to minimize on?state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch.
NDC7003P Features
? ?0.34 A, ?60 V RDS(ON) = 5 @ VGS = ?10 V
RDS(ON) = 7 @ VGS = ?4.5 V
? Low Gate Charge
? Fast Switching Speed
? High Performance Trench Technology for Low RDS(ON)
? SUPERSOT?6 Package: Small Footprint (72% smaller than
standard SO?8); Low Profile (1 mm Thick)
? This is a Pb?Free Device
NDC7003P Applications
This product is particularly suited to low voltage applications requiring a low current high side switch.
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