NDC7003P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

Power Dissipation :

960mW

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

23 Weeks

REACH SVHC :

No SVHC

Length :

3mm

Contact Plating :

Tin

FET Feature :

Logic Level Gate

Nominal Vgs :

-1.9 V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

5 Ω @ 340mA, 10V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Min Breakdown Voltage :

60V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Max Junction Temperature (Tj) :

150°C

Current - Continuous Drain (Id) @ 25°C :

340mA

Number of Terminations :

6

Radiation Hardening :

No

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Input Capacitance (Ciss) (Max) @ Vds :

66pF @ 25V

Weight :

36mg

Published :

2002

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 10V

Current Rating :

-220mA

Pbfree Code :

yes

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rise Time :

10ns

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Threshold Voltage :

-1V

Mount :

Surface Mount

Max Power Dissipation :

960mW

Series :

PowerTrench®

JESD-609 Code :

e3

Number of Channels :

2

Fall Time (Typ) :

10 ns

Number of Elements :

2

Power - Max :

700mW

Turn-Off Delay Time :

8 ns

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

0.34A

Height :

1.1mm

Turn On Delay Time :

3.2 ns

Resistance :

5Ohm

FET Type :

2 P-Channel (Dual)

Voltage - Rated DC :

-50V

Number of Pins :

6

Drain to Source Breakdown Voltage :

-60V

Continuous Drain Current (ID) :

-340mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

1.7mm

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)