NDC7001C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Nominal Vgs :

2.1 V

Contact Plating :

Tin

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

2 Ω @ 510mA, 10V

Current Rating :

350mA

FET Type :

N and P-Channel

Factory Lead Time :

8 Weeks

Published :

2002

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 10V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

700mW

ECCN Code :

EAR99

Min Breakdown Voltage :

60V

Max Junction Temperature (Tj) :

150°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V

Element Configuration :

Dual

Number of Channels :

2

Turn On Delay Time :

2.8 ns

Current - Continuous Drain (Id) @ 25°C :

510mA 340mA

Weight :

36mg

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

510mA

Dual Supply Voltage :

60V

Number of Terminations :

6

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Element Material :

SILICON

Turn-Off Delay Time :

8 ns

JESD-609 Code :

e3

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Threshold Voltage :

2.1V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Length :

3mm

REACH SVHC :

No SVHC

Fall Time (Typ) :

10 ns

Resistance :

2Ohm

Width :

1.7mm

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Height :

900μm

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

0.51A

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

60V

Rise Time :

10ns

Number of Elements :

2

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Pbfree Code :

yes

Radiation Hardening :

No

Number of Pins :

6

Power Dissipation :

960mW