NDC7001C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

510mA

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Max Junction Temperature (Tj) :

150°C

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Threshold Voltage :

2.1V

FET Type :

N and P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

900μm

Operating Mode :

ENHANCEMENT MODE

Weight :

36mg

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Element Configuration :

Dual

Width :

1.7mm

Turn On Delay Time :

2.8 ns

Turn-Off Delay Time :

8 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Channels :

2

Drain to Source Breakdown Voltage :

60V

Published :

2002

Resistance :

2Ohm

FET Feature :

Logic Level Gate

Max Power Dissipation :

700mW

Min Breakdown Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

510mA 340mA

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 10V

Number of Elements :

2

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Lead Free :

Lead Free

Pbfree Code :

yes

Dual Supply Voltage :

60V

Length :

3mm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

2 Ω @ 510mA, 10V

Number of Pins :

6

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Number of Terminations :

6

Contact Plating :

Tin

Nominal Vgs :

2.1 V

Current Rating :

350mA

Drain Current-Max (Abs) (ID) :

0.51A

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Power Dissipation :

960mW

Rise Time :

10ns