MWI50-12E7
- Mfr.Part #
- MWI50-12E7
- Manufacturer
- Littelfuse
- Package / Case
- e2
- Datasheet
- Download
- Description
- IGBT MODULE 1200V 90A 350W E2
- Stock
- 42,830
- In Stock :
- 42,830
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Modules
- VCEsat-Max :
- 2.4 V
- Gate-Emitter Voltage-Max :
- 20 V
- Additional Feature :
- UL REGONIZED
- Supplier Device Package :
- e2
- Power - Max :
- 350W
- Number of Terminations :
- 11
- Qualification Status :
- Not Qualified
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 50A
- JESD-30 Code :
- R-XUFM-P11
- Input :
- Standard
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 26 Weeks
- Collector-Emitter Voltage-Max :
- 1200 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MWI
- Pin Count :
- 17
- Number of Elements :
- 6
- Case Connection :
- Isolated
- Terminal Form :
- PIN/PEG
- Max Power Dissipation :
- 350W
- Turn On Time :
- 130 ns
- Published :
- 2007
- Number of Pins :
- 2
- Turn Off Time-Nom (toff) :
- 710 ns
- Number of Terminals :
- 11
- Package :
- Box
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- UPPER
- Current - Collector Cutoff (Max) :
- 800μA
- Surface Mount :
- No
- Operating Temperature :
- -40°C~125°C TJ
- Product Status :
- Obsolete
- Mount :
- Chassis Mount
- Current - Collector (Ic) (Max) :
- 90 A
- Base Product Number :
- MWI50
- Power Dissipation-Max (Abs) :
- 350 W
- Polarity/Channel Type :
- N-Channel
- Collector Current-Max (IC) :
- 90 A
- Input Capacitance :
- 3.8nF
- Series :
- -
- Configuration :
- Three Phase Inverter
- Mounting Type :
- Chassis Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Cies) @ Vce :
- 3.8nF @ 25V
- JESD-609 Code :
- e3
- Reach Compliance Code :
- Compliant
- Transistor Application :
- POWER CONTROL
- NTC Thermistor :
- No
- RoHS :
- Compliant
- Package Shape :
- RECTANGULAR
- Package / Case :
- e2
- Manufacturer :
- IXYS Corporation
- Terminal Finish :
- Tin (Sn) - with Nickel (Ni) barrier
- Collector Emitter Voltage (VCEO) :
- 2.4V
- Max Collector Current :
- 90A
- Collector Emitter Breakdown Voltage :
- 1.2kV
- IGBT Type :
- NPT
- Datasheets
- MWI50-12E7
MWI50-12E7 datasheet pdf and Transistors - IGBTs - Modules product details from IXYS stock available at
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