MTB50P03HDLT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

30V

Element Configuration :

Single

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 5V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Contact Plating :

Tin

Voltage - Rated DC :

-30V

Vgs (Max) :

±15V

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 days ago)

Radiation Hardening :

No

Power Dissipation-Max :

2.5W Ta 125W Tc

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

4900pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

25m Ω @ 25A, 5V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

JESD-609 Code :

e3

Rise Time :

340ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.29mm

Width :

9.65mm

Case Connection :

DRAIN

Turn On Delay Time :

22 ns

Gate to Source Voltage (Vgs) :

15V

Current Rating :

-50A

Drive Voltage (Max Rds On,Min Rds On) :

5V

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-30V

Turn-Off Delay Time :

90 ns

Published :

2006

Threshold Voltage :

1.5V

Factory Lead Time :

17 Weeks

Resistance :

25mOhm

Pbfree Code :

yes

Height :

4.83mm

Number of Terminations :

2

Power Dissipation :

125W

Continuous Drain Current (ID) :

50A

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

218 ns

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant