MTB50P03HDL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Power Dissipation :

125W

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 5V

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.025Ohm

Transistor Application :

SWITCHING

FET Type :

P-Channel

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

50A Tc

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Fall Time (Typ) :

218 ns

Rds On (Max) @ Id, Vgs :

25m Ω @ 25A, 5V

Drain to Source Voltage (Vdss) :

30V

Rise Time :

340ns

Voltage - Rated DC :

-30V

Gate to Source Voltage (Vgs) :

15V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

2.5W Ta 125W Tc

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Published :

2006

Current Rating :

-50A

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Threshold Voltage :

-1.5V

Drain to Source Breakdown Voltage :

-30V

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

5V

Vgs (Max) :

±15V

Number of Elements :

1

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn-Off Delay Time :

90 ns

Input Capacitance (Ciss) (Max) @ Vds :

4900pF @ 25V

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Pin Count :

3

Continuous Drain Current (ID) :

50A

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube

Terminal Form :

Gull wing