MTB50P03HDLT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

1250 mJ

Peak Reflow Temperature (Cel) :

240

Rds On (Max) @ Id, Vgs :

25m Ω @ 25A, 5V

Pin Count :

3

Terminal Form :

Gull wing

FET Type :

P-Channel

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Terminal Position :

Single

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 5V

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

4.9pF @ 25V

Terminal Finish :

TIN LEAD

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Voltage (Vdss) :

30V

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

50A

Pulsed Drain Current-Max (IDM) :

150A

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

No

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.025Ohm

Number of Terminations :

2

RoHS Status :

Non-RoHS Compliant