MSD1819A-RT1G
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- Mfr.Part #
- MSD1819A-RT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SC70-3
- Stock
- 5,940
- In Stock ：
- 5,940
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 50V
- Current Rating :
- 100mA
- Number of Pins :
- 3
- Power Dissipation :
- 150mW
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- hFE Min :
- 210
- Collector Emitter Voltage (VCEO) :
- 60V
- Voltage - Rated DC :
- 50V
- Width :
- 1.35mm
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 7V
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Element Material :
- SILICON
- Package / Case :
- SC-70, SOT-323
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Type :
- NPN
- Height :
- 900μm
- Collector Base Voltage (VCBO) :
- 60V
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Contact Plating :
- Tin
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 150mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Base Part Number :
- MSD1819A
- Current - Collector Cutoff (Max) :
- 100nA
- Lead Free :
- Lead Free
- Length :
- 2.2mm
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Operating Temperature :
- 150°C TJ
- Datasheets
- MSD1819A-RT1G
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MSD1819A-RT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 210 @ 2mA 10V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 100mA volts.
MSD1819A-RT1G Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
MSD1819A-RT1G Applications
There are a lot of ON Semiconductor
MSD1819A-RT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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