MPSA92RLRMG
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- Mfr.Part #
- MPSA92RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A TO92
- Stock
- 26,000
- In Stock ：
- 26,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -300V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Frequency :
- 50MHz
- Packaging :
- Tape and Box (TB)
- Max Collector Current :
- 500mA
- Collector Emitter Breakdown Voltage :
- 300V
- Collector Base Voltage (VCBO) :
- 300V
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- hFE Min :
- 25
- Collector Emitter Saturation Voltage :
- -500mV
- Length :
- 6.35mm
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 300V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 625mW
- Transition Frequency :
- 50MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Height :
- 6.35mm
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 300V
- Published :
- 2010
- Polarity/Channel Type :
- PNP
- Current Rating :
- -500mA
- JESD-609 Code :
- e1
- Width :
- 6.35mm
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- No
- Base Part Number :
- MPSA92
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Power Dissipation :
- 625mW
- Weight :
- 4.535924g
- Terminal Position :
- BOTTOM
- REACH SVHC :
- Unknown
- Pin Count :
- 3
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 50MHz
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MPSA92RLRMG
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA92RLRMG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 30mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPSA92RLRMG Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92RLRMG Applications
There are a lot of ON Semiconductor
MPSA92RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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