MPSA92RLRMG
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- Mfr.Part #
- MPSA92RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A TO92
- Stock
- 26,000
- In Stock ：
- 26,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 625mW
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- hFE Min :
- 25
- Voltage - Rated DC :
- -300V
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e1
- Width :
- 6.35mm
- Collector Base Voltage (VCBO) :
- 300V
- Pin Count :
- 3
- Transition Frequency :
- 50MHz
- Length :
- 6.35mm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 300V
- Frequency :
- 50MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Tape and Box (TB)
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 50MHz
- Published :
- 2010
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 300V
- Max Power Dissipation :
- 625mW
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- Unknown
- Collector Emitter Saturation Voltage :
- -500mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- Current Rating :
- -500mA
- Base Part Number :
- MPSA92
- Weight :
- 4.535924g
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Height :
- 6.35mm
- Max Collector Current :
- 500mA
- Datasheets
- MPSA92RLRMG
MPSA92RLRMG Documents
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA92RLRMG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 30mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPSA92RLRMG Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92RLRMG Applications
There are a lot of ON Semiconductor
MPSA92RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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