MPSA92RLRMG
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- Mfr.Part #
- MPSA92RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A TO92
- Stock
- 26,000
- In Stock ：
- 26,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 300V
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 4.535924g
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Pbfree Code :
- yes
- REACH SVHC :
- Unknown
- Collector Base Voltage (VCBO) :
- 300V
- Surface Mount :
- No
- Number of Terminations :
- 3
- Base Part Number :
- MPSA92
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 300V
- Transition Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Voltage - Rated DC :
- -300V
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Published :
- 2010
- Power Dissipation :
- 625mW
- hFE Min :
- 25
- Gain Bandwidth Product :
- 50MHz
- Max Collector Current :
- 500mA
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -500mV
- Width :
- 6.35mm
- Lead Free :
- Lead Free
- Height :
- 6.35mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 300V
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- -500mA
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Length :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Frequency :
- 50MHz
- Packaging :
- Tape and Box (TB)
- Datasheets
- MPSA92RLRMG
MPSA92RLRMG Documents
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA92RLRMG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 30mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPSA92RLRMG Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92RLRMG Applications
There are a lot of ON Semiconductor
MPSA92RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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