MPSA92RLRAG
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- Mfr.Part #
- MPSA92RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A TO92
- Stock
- 18,442
- In Stock ：
- 18,442
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 625mW
- Voltage - Rated DC :
- -300V
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Current Rating :
- -500mA
- REACH SVHC :
- Unknown
- Radiation Hardening :
- No
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 300V
- Height :
- 5.33mm
- Mounting Type :
- Through Hole
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 22 hours ago)
- Width :
- 4.19mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2010
- Base Part Number :
- MPSA92
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 625mW
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- -500mV
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 5.2mm
- Packaging :
- Cut Tape (CT)
- Transistor Type :
- PNP
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- hFE Min :
- 25
- Weight :
- 4.535924g
- Frequency :
- 50MHz
- Number of Terminations :
- 3
- Max Collector Current :
- 500mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Pbfree Code :
- yes
- Transition Frequency :
- 50MHz
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 50MHz
- Number of Pins :
- 3
- Surface Mount :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 300V
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Max Breakdown Voltage :
- 300V
- Collector Base Voltage (VCBO) :
- 300V
- Datasheets
- MPSA92RLRAG
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Cut Tape (CT) Through Hole
MPSA92RLRAG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 30mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 500mA volts.
MPSA92RLRAG Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92RLRAG Applications
There are a lot of ON Semiconductor
MPSA92RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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