MPSA75RLRP
- Mfr.Part #
- MPSA75RLRP
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP DARL 40V 0.5A TO92
- Stock
- 48,890
- In Stock :
- 48,890
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Lead Free :
- Contains Lead
- Voltage - Rated DC :
- -40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- RoHS Status :
- Non-RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 240
- Polarity :
- PNP
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 10V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mounting Type :
- Through Hole
- Continuous Collector Current :
- -500mA
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- hFE Min :
- 10000
- JESD-30 Code :
- O-PBCY-T3
- HTS Code :
- 8541.21.00.95
- Transistor Type :
- PNP - Darlington
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 500nA
- Transition Frequency :
- 125MHz
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 40V
- Published :
- 2009
- Element Configuration :
- Single
- Packaging :
- Tape and Box (TB)
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Max Collector Current :
- 500mA
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 40V
- Power Dissipation :
- 625mW
- Max Power Dissipation :
- 625mW
- Current Rating :
- -500mA
- Datasheets
- MPSA75RLRP

PNP - Darlington -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA75RLRP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.During maximum operation, collector current can be as low as 500mA volts.
MPSA75RLRP Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSA75RLRP Applications
There are a lot of ON Semiconductor
MPSA75RLRP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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