MPSA70RLRMG
- Mfr.Part #
- MPSA70RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.1A TO92
- Stock
- 24,168
- In Stock :
- 24,168
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- HTS Code :
- 8541.21.00.75
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Voltage - Rated DC :
- -40V
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 4V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Pin Count :
- 3
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- hFE Min :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -250mV
- Packaging :
- Tape and Box (TB)
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector (Ic) (Max) :
- 100mA
- Current Rating :
- -100mA
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 125MHz
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Transistor Application :
- AMPLIFIER
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 250mV
- Gain Bandwidth Product :
- 125MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 625mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Collector Current :
- 100mA
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 5mA 10V
- Qualification Status :
- Not Qualified
- Datasheets
- MPSA70RLRMG

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA70RLRMG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 5mA 10V.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 125MHz.A maximum collector current of 100mA volts can be achieved.
MPSA70RLRMG Features
the DC current gain for this device is 40 @ 5mA 10V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4V
the current rating of this device is -100mA
a transition frequency of 125MHz
MPSA70RLRMG Applications
There are a lot of ON Semiconductor
MPSA70RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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