MPSA63RLRMG

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Mfr.Part #
MPSA63RLRMG
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS PNP DARL 30V 0.5A TO92
Stock
12,411
In Stock :
12,411

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Pins :
3
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Continuous Collector Current :
-500mA
Peak Reflow Temperature (Cel) :
260
Emitter Base Voltage (VEBO) :
10V
Number of Terminations :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
RoHS Status :
RoHS Compliant
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Pin Count :
3
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Max Power Dissipation :
625mW
Terminal Position :
BOTTOM
Max Collector Current :
500mA
Mount :
Through Hole
hFE Min :
5000
Power Dissipation :
625mW
Reach Compliance Code :
Unknown
Current - Collector Cutoff (Max) :
100nA ICBO
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
30V
Transistor Type :
PNP - Darlington
Operating Temperature :
-55°C~150°C TJ
Published :
2007
JESD-609 Code :
e1
Base Part Number :
MPSA63
Current Rating :
-500mA
Voltage - Rated DC :
-30V
Transition Frequency :
125MHz
Number of Elements :
1
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency - Transition :
125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 100mA 5V
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Voltage (VCEO) :
30V
HTS Code :
8541.21.00.75
Lead Free :
Lead Free
Packaging :
Tape and Box (TB)
Collector Base Voltage (VCBO) :
30V
Element Configuration :
Single
Polarity :
PNP
Datasheets
MPSA63RLRMG
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSA63RLRMG from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Base Part Number:MPSA63, MPSA63RLRMG pinout, MPSA63RLRMG datasheet PDF, MPSA63RLRMG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSA63RLRMG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSA63RLRMG


PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

MPSA63RLRMG Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.During maximum operation, collector current can be as low as 500mA volts.

MPSA63RLRMG Features


the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz


MPSA63RLRMG Applications


There are a lot of ON Semiconductor
MPSA63RLRMG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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