MPSA42RLRMG
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- Mfr.Part #
- MPSA42RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 3,419
- In Stock ：
- 3,419
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Transition Frequency :
- 50MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 50MHz
- Height :
- 6.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 300V
- RoHS Status :
- RoHS Compliant
- hFE Min :
- 25
- Published :
- 2010
- Gain Bandwidth Product :
- 50MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Width :
- 6.35mm
- Collector Base Voltage (VCBO) :
- 300V
- Max Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Packaging :
- Tape and Box (TB)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 300V
- Collector Emitter Saturation Voltage :
- 500mV
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- MPSA42
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Max Breakdown Voltage :
- 300V
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Surface Mount :
- No
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 300V
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Length :
- 6.35mm
- Weight :
- 4.535924g
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Datasheets
- MPSA42RLRMG
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA42RLRMG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 30mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 500mA volts.
MPSA42RLRMG Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RLRMG Applications
There are a lot of ON Semiconductor
MPSA42RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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