MPSA29-D26Z

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

100V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Base Part Number :

MPSA29

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Transistor Type :

NPN - Darlington

hFE Min :

10000

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Mount :

Through Hole

Power - Max :

625mW

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Polarity :

NPN

Collector Emitter Saturation Voltage :

1.2V

Collector Emitter Voltage (VCEO) :

100V

Max Collector Current :

800mA

Transition Frequency :

125MHz

Number of Terminations :

3

Mounting Type :

Through Hole

Collector Base Voltage (VCBO) :

100V

Current - Collector Cutoff (Max) :

500nA

Max Breakdown Voltage :

100V

Published :

2007

Weight :

201mg

Frequency - Transition :

125MHz

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Max Power Dissipation :

625mW

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Factory Lead Time :

10 Weeks

Terminal Position :

BOTTOM

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

12V

Number of Elements :

1

ECCN Code :

EAR99