MPSA14RLRAG
- Mfr.Part #
- MPSA14RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A TO92
- Stock
- 26,187
- In Stock :
- 26,187
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 125MHz
- Current Rating :
- 500mA
- Max Power Dissipation :
- 625mW
- Max Collector Current :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 6.35mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 1.5V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- hFE Min :
- 10000
- JESD-609 Code :
- e1
- Transistor Type :
- NPN - Darlington
- Mounting Type :
- Through Hole
- Length :
- 6.35mm
- Transition Frequency :
- 125MHz
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 6.35mm
- Base Part Number :
- MPSA14
- Polarity :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Collector Current :
- 500mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 30V
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Position :
- BOTTOM
- Weight :
- 4.535924g
- Published :
- 2007
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 625mW
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 30V
- Pin Count :
- 3
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 10V
- Transistor Application :
- AMPLIFIER
- Datasheets
- MPSA14RLRAG

NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA14RLRAG Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.Maintaining the continuous collector voltage at 500mA is essential for high efficiency.Keeping the emitter base voltage at 10V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).125MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
MPSA14RLRAG Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA14RLRAG Applications
There are a lot of ON Semiconductor
MPSA14RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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