MPSA14,116
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- Mfr.Part #
- MPSA14,116
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A TO92-3
- Stock
- 3,160
- In Stock ：
- 3,160
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transition Frequency :
- 125MHz
- Frequency - Transition :
- 125MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- JESD-609 Code :
- e3
- Power - Max :
- 500mW
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- VCEsat-Max :
- 1.5 V
- JESD-30 Code :
- O-PBCY-T3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Number of Terminations :
- 3
- Base Part Number :
- MPSA14
- Polarity/Channel Type :
- NPN
- Surface Mount :
- No
- Published :
- 2007
- Transistor Type :
- NPN - Darlington
- HTS Code :
- 8541.21.00.95
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 500mA
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- MPSA14,116
,TO-226_straightlead.jpg)
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA14,116 Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 125MHz.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.
MPSA14,116 Features
the DC current gain for this device is 20000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 125MHz
MPSA14,116 Applications
There are a lot of NXP USA Inc.
MPSA14,116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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