MPSA13_D75Z
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- Mfr.Part #
- MPSA13_D75Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 1.2A TO92-3
- Stock
- 4,774
- In Stock ：
- 4,774
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-92-3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Box (TB)
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 125MHz
- Transistor Type :
- NPN - Darlington
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- MPSA13
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Current - Collector (Ic) (Max) :
- 1.2A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Power - Max :
- 625mW
- Datasheets
- MPSA13_D75Z
NPN - Darlington -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA13_D75Z Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 100μA, 100mA.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (30V maximal voltage).
MPSA13_D75Z Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the supplier device package of TO-92-3
MPSA13_D75Z Applications
There are a lot of ON Semiconductor
MPSA13_D75Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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