MPS6729
- Mfr.Part #
- MPS6729
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A TO92
- Stock
- 18,725
- In Stock :
- 18,725
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Max Power Dissipation :
- 1W
- Number of Elements :
- 1
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 500mV
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Collector Emitter Saturation Voltage :
- -500mV
- Emitter Base Voltage (VEBO) :
- 4V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- Transition Frequency :
- 50MHz
- Published :
- 2006
- Collector Emitter Breakdown Voltage :
- 80V
- Voltage - Rated DC :
- -80V
- Peak Reflow Temperature (Cel) :
- 240
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- hFE Min :
- 80
- Pin Count :
- 3
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Current Rating :
- -500mA
- HTS Code :
- 8541.29.00.95
- JESD-609 Code :
- e0
- Reach Compliance Code :
- not_compliant
- Power Dissipation :
- 1W
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 250mA 1V
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Through Hole
- Max Collector Current :
- 500mA
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Contains Lead
- Pbfree Code :
- No
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 250mA
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- -80V
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- PNP
- Datasheets
- MPS6729
,TO-226_bentlead.jpg)
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPS6729 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 250mA 1V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 10mA, 250mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 50MHz.A maximum collector current of 500mA volts can be achieved.
MPS6729 Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPS6729 Applications
There are a lot of ON Semiconductor
MPS6729 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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