MPS6729
- Mfr.Part #
- MPS6729
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A TO92
- Stock
- 18,725
- In Stock :
- 18,725
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- Lead Free :
- Contains Lead
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- HTS Code :
- 8541.29.00.95
- JESD-609 Code :
- e0
- Power Dissipation :
- 1W
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Transistor Type :
- PNP
- Mount :
- Through Hole
- hFE Min :
- 80
- Collector Emitter Voltage (VCEO) :
- 500mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 250mA
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- -80V
- Transistor Element Material :
- SILICON
- Current Rating :
- -500mA
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2006
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -500mV
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Terminations :
- 3
- Max Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 250mA 1V
- Transition Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- 4V
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Voltage - Rated DC :
- -80V
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Pin Count :
- 3
- Reach Compliance Code :
- not_compliant
- Max Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Pbfree Code :
- No
- Peak Reflow Temperature (Cel) :
- 240
- Datasheets
- MPS6729
MPS6729 Documents
,TO-226_bentlead.jpg)
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPS6729 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 250mA 1V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 10mA, 250mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 50MHz.A maximum collector current of 500mA volts can be achieved.
MPS6729 Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPS6729 Applications
There are a lot of ON Semiconductor
MPS6729 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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