MPS650RLRA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

40V

Published :

2005

Voltage - Rated DC :

40V

Base Part Number :

MPS650

DC Current Gain (hFE) (Min) @ Ic, Vce :

75 @ 1A 2V

Polarity/Channel Type :

NPN

JESD-609 Code :

e0

Packaging :

Tape and Reel (TR)

JESD-30 Code :

O-PBCY-T3

Emitter Base Voltage (VEBO) :

5V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Mount :

Through Hole

Terminal Position :

BOTTOM

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

500mV

Element Configuration :

Single

Max Power Dissipation :

625mW

Gain Bandwidth Product :

75MHz

Collector Base Voltage (VCBO) :

60V

Current Rating :

2A

HTS Code :

8541.21.00.95

Transistor Element Material :

SILICON

Number of Terminations :

3

Terminal Finish :

Tin/Lead (Sn/Pb)

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

30

Collector Emitter Saturation Voltage :

500mV

Pin Count :

3

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

75MHz

Current - Collector Cutoff (Max) :

100nA ICBO

hFE Min :

75

RoHS Status :

Non-RoHS Compliant

Lead Free :

Contains Lead

Number of Elements :

1

Max Collector Current :

2A

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

240