MPS6726G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Height :

6.35mm

Voltage - Rated DC :

-30V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

-500mV

Packaging :

Bulk

Mounting Type :

Through Hole

Max Collector Current :

1A

REACH SVHC :

Unknown

Emitter Base Voltage (VEBO) :

5V

Weight :

4.535924g

Radiation Hardening :

No

Number of Terminations :

3

Pin Count :

3

Length :

6.35mm

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Polarity/Channel Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Width :

6.35mm

Max Power Dissipation :

1W

Published :

2000

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 1A 1V

ECCN Code :

EAR99

Transition Frequency :

50MHz

Collector Emitter Voltage (VCEO) :

30V

Current - Collector Cutoff (Max) :

100nA ICBO

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

40V

Current Rating :

-1A

Collector Emitter Breakdown Voltage :

30V

Number of Elements :

1

Package / Case :

TO-226-3, TO-92-3 Long Body

Terminal Position :

BOTTOM

Lead Free :

Lead Free

Surface Mount :

No

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Type :

PNP

RoHS Status :

RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Element Configuration :

Single

Power Dissipation :

1W

Number of Pins :

3

Pbfree Code :

yes

hFE Min :

60

JESD-609 Code :

e1