MPS6717G

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Mfr.Part #
MPS6717G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS NPN 80V 0.5A TO92
Stock
47,419
In Stock :
47,419

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 250mA 1V
Peak Reflow Temperature (Cel) :
260
Max Collector Current :
500mA
Collector Emitter Voltage (VCEO) :
500mV
Base Part Number :
MPS6717
Mount :
Through Hole
Transistor Application :
AMPLIFIER
Lead Free :
Lead Free
Number of Pins :
3
Lifecycle Status :
OBSOLETE (Last Updated: 2 days ago)
hFE Min :
80
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
80V
ECCN Code :
EAR99
Transistor Type :
NPN
Qualification Status :
Not Qualified
Pin Count :
3
Polarity/Channel Type :
NPN
Max Power Dissipation :
1W
Packaging :
Bulk
Vce Saturation (Max) @ Ib, Ic :
500mV @ 10mA, 250mA
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
BOTTOM
Published :
2006
Transition Frequency :
50MHz
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
80V
Current Rating :
1A
Current - Collector Cutoff (Max) :
100nA ICBO
Package / Case :
TO-226-3, TO-92-3 Long Body
Collector Base Voltage (VCBO) :
80V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pbfree Code :
yes
Power - Max :
1W
RoHS Status :
RoHS Compliant
Number of Terminations :
3
Collector Emitter Saturation Voltage :
500mV
Number of Elements :
1
Transistor Element Material :
SILICON
Emitter Base Voltage (VEBO) :
5V
Time@Peak Reflow Temperature-Max (s) :
40
Mounting Type :
Through Hole
HTS Code :
8541.29.00.75
JESD-609 Code :
e1
Datasheets
MPS6717G
Introducing Transistors - Bipolar (BJT) - Single onsemi MPS6717G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MPS6717, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 Long Body, Number of Terminations:3, Mounting Type:Through Hole, MPS6717G pinout, MPS6717G datasheet PDF, MPS6717G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPS6717G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPS6717G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole

MPS6717G Overview


In this device, the DC current gain is 50 @ 250mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 10mA, 250mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

MPS6717G Features


the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz


MPS6717G Applications


There are a lot of ON Semiconductor
MPS6717G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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