MPS6717
- Mfr.Part #
- MPS6717
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 7,024
- In Stock :
- 7,024
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1W
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 240
- Max Collector Current :
- 500mA
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 5V
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Transition Frequency :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 250mA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 80V
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Lead Free :
- Contains Lead
- Base Part Number :
- MPS6717
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 3
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 250mA 1V
- Voltage - Rated DC :
- 80V
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- 1A
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 80
- Reach Compliance Code :
- not_compliant
- HTS Code :
- 8541.29.00.75
- JESD-609 Code :
- e0
- Published :
- 2006
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- Datasheets
- MPS6717
,TO-226_bentlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPS6717 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 250mA 1V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 10mA, 250mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 50MHz.A maximum collector current of 500mA volts can be achieved.
MPS6717 Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPS6717 Applications
There are a lot of ON Semiconductor
MPS6717 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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